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RT3PDDM Datasheet(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3PDDM Datasheet(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 3 page  RT3PDDM Composite Transistor With Resistor For Switching Application Silicon Epitaxial Type ISAHAYA ELECTRONICS CORPORATION DESCRIPTION RT3PDDM is composite transistor built with two RT1P237 chips in SC-88 package. FEATURE Silicon epitaxial type Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, Switching circuit, Interface circuit, Driver circuit OUTLINE DRAWING Unit：mm MAXIMUM RATING(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage -50 V VEBO Emitter to Base voltage -6 V VCEO Collector to Emitter voltage -50 V VIN Input voltage -12 V IC Collector current -100 mA ICM Peak Collector current -200 mA PT Collector dissipation（Total） 150 mW Tj Junction temperature ＋ 150 ℃ Tstg Storage temperature -55～＋150 ℃ ELECTRICAL CHARACTERISTICS(Ta=25℃)(RTr1, RTr2 COMMON) SYMBOL PARAMETER TEST CONDITIONS LIMITS UNIT MIN TYP MAX V(BR)CEO Collector to Emitter break down voltage I C=-100µA，RBE=∞ -50 － － V ICBO Collector cut off current VCB=-50V，I E =0 － － -0.1 µA IEBO Emitter cut off current VEB=-5V，I C =0 -76 -102 -147 µA hFE DC forward current gain VCE=-5V，I C =-10mA 80 － － － VCE(sat) Collector to Emitter saturation voltage I C =-10mA，I B =-0.5mA － － -0.3 V VI(ON) Input on voltage VCE=-0.2V，I C =-5mA － -0.7 -1.1 V VI(OFF) Input off voltage VCE=-5V，I C =-100µA -0.5 -0.6 － V R1 Input resistor － 1.5 2.2 2.9 kΩ R2/R1 Resistor ratio － 17 22 26 － fT Gain band width product VCE=-6V，I E =10mA － 150 － MHz MARKING D P D １ 2 3 6 5 4 . 電極接続 ①：EMITTER1 ②：BASE1 ③：COLLECTOR2 ④：EMITTER2 ⑤：BASE2 ⑥：COLLECTOR1 JEITA：SC-88 JEDEC：－ ①② ⑥ ③ ④ ⑤ RTr1 RTr2 R2 R2 R1 R1 1.25 2.1 ① ② ③ ⑤ ④ ⑥ |
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