E-PHEMT

SAV-581+

Notes

A. Performance and quality attributes and conditions not expressly stated in this specification document are intended to be excluded and do not form a part of this specification document.

B. Electrical specifications and performance data contained in this specification document are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions.

C. The parts covered by this specification document are subject to Mini-Circuits standard limited warranty and terms and conditions (collectively, “Standard Terms”); Purchasers of this part are entitled

to the rights and benefits contained therein. For a full statement of the Standard Terms and the exclusive rights and remedies thereunder, please visit Mini-Circuits’ website at www.minicircuits.com/MCLStore/terms.jsp

Page 7 of 11

P1dB vs FREQUENCY & TEMPERATURE (1,4)

@ VDS=4V, IDS=30mA

15

16

17

18

19

20

21

22

23

24

25

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

FREQUENCY (GHz)

-45°C

+25°C

+85°C

F Min vs FREQ @ VDS=3V (3)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0

FREQUENCY (GHz)

20 mA

30 mA

40 mA

Notes:

Noise parameters were measured over 0.5 to 6 GHz by Modelithics® using a solid state tuner-based noise parameter (NP) test

system available from Maury Microwave. F Min, optimimum source reflection coefficient and noise resistance values are calculated

values based on a set of measurements made at approximately 16 different impedances. Some data smoothing was applied to ar-

rive at the presented data set.

S-parameters were measured by Modelithics® on an Anritsu Lightning vector network analyzer over 0.1 to 18GHz using 350um

pitch RF probes from GGB industries combined with customized thru-reflect-line (TRL) calibration standards. The reference plane is

at the device package leads, as shown in the picture.

Fig 3. Reference Plane Location

(Refer to Application Note AN-60-040)

(1) Includes test board loss, set-up and conditions per Figure 1.

(2) Measured using HP4155B semiconductor parameter analyzer.

(3) F Min is minimum Noise Figure.

(4) Drain current was allowed to increase during compression measurement.