MICROWAVE CORPORATION

8 - 145

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order Online at www.hittite.com

8

HMC375LP3

v01.0604

GaAs PHEMT MMIC LOW NOISE

AMPLIFIER, 1.7 - 2.2 MHz

Typical Supply Current vs. Vdd

Vdd (Vdc)

Idd (mA)

+4.5

135

+5.0

136

+5.5

137

Drain Bias Voltage (Vdd1, Vdd2)

+8.0 Vdc

RF Input Power (RFin)(Vs = +5.0 Vdc)

+15 dBm

Channel Temperature

150 °C

Continuous Pdiss (T = 85 °C)

(derate 15.6 mW/°C above 85 °C)

1.015 W

Thermal Resistance

(channel to ground paddle)

64.1 °C/W

Storage Temperature

-65 to +150 °C

Operating Temperature

-40 to +85 °C

Absolute Maximum Ratings

Outline Drawing

NOTES:

1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED

PLASTIC SILICA AND SILICON IMPREGNATED.

2. LEAD AND GROUND PADDLE MATERIAL: COPPER ALLOY

3. LEAD AND GROUND PADDLE PLATING: Sn/Pb SOLDER

4. DIMENSIONS ARE IN INCHES [MILLIMETERS].

5. LEAD SPACING TOLERANCE IS NON-CUMULATIVE

6. CHARACTERS TO BE HELVETICA MEDIUM, 0.35 HIGH, WHITE INK,

OR LASER MARK LOCATED APPROX. AS SHOWN.

7. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM.

PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM.

8. PACKAGE WARP SHALL NOT EXCEED 0.05mm.

9. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED

TO PCB RF GROUND.

9. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB

LAND PATTERN.