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MASWSS0180SMB Datasheet(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

No. de pieza MASWSS0180SMB
Descripción Electrónicos  GaAs SPDT Terminated Switch
PDF  4 Pages
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Fabricante Electrónico  MA-COM [M/A-COM Technology Solutions, Inc.]
Página de inicio  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASWSS0180SMB Datasheet(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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GaAs SPDT Terminated Switch
DC - 2.5 GHz
Rev. V2
MASWSS0180
2
2
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
For further information and support please visit:
https://www.macom.com/support
2
Parameter
Test Conditions
Units
Min.
Typ. 5
Max.
Insertion Loss
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
dB
0.55
0.60
0.65
0.7
Isolation
DC - 0.5 GHz
0.5 - 1.0 GHz
1.0 - 2.0 GHz
dB
dB
dB
36
50
43
35
VSWR On/Off
DC - 2.0 GHz
Ratio
1.1:1
Trise, Tfall
10% to 90% RF, 90% to 10 % RF
nS
10
Ton, Toff
50% Control to 90% RF, 50% Control to 10% RF
nS
20
Transients
In-Band
mV
25
1 dB Compression Point
Input Power
50 MHz @ 2.9V
1.0 GHz @ 2.9V
50 MHz @ 5.0V
1.0 GHz @ 5.0V
dBm
dBm
dBm
dBm
15
16
26
27
2nd Order Intercept
Measured Relative to Input Power
(for two-tone input power up to +5 dBm)
50 MHz @ 2.9V
1.0 GHz @ 2.9V
50 MHz @ 5.0V
1.0 GHz @ 5.0V
dBm
dBm
dBm
dBm
46
52
63
82
3rd Order Intercept
Measured Relative to Input Power
(for two-tone input power up to +5 dBm)
50 MHz @ 2.9V
1.0 GHz @ 2.9V
50 MHz @ 5.0V
1.0 GHz @ 5.0V
dBm
dBm
dBm
dBm
27
27
47
50
Control Current
VC = 2.9 V
µA
15
35
5. Typical values represent performance at middle of frequency range noted.
6. 0 = 0 V ± 0.2 V, 1 = -2.9 V to -5.0 V
Electrical Specifications: TA = 25°C, VC = 0 V / -2.9 V, Z0 = 50 Ω
Truth Table 6
Control Inputs
Condition of Switch
RF Common to Each RF Port
V1
V2
RFC-RF1
RFC-RF2
1
0
ON
OFF
0
1
OFF
ON
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.



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