GaAs SPDT Switch

DC - 3.0 GHz

Rev. V1

MASWSS0192

2

2

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2

Parameter

Test Conditions

Units

Min.

Typ.

Max.

DC - 1.0 GHz

DC - 3.0 GHz

dB

dB

—

—

0.18

0.35

0.40

0.60

Isolation

DC - 1.0 GHz

DC - 3.0 GHz

dB

dB

20.0

9.5

24.0

13.5

—

—

VSWR

DC - 1.0 GHz

DC - 3.0 GHz

Ratio

Ratio

—

—

1.1:1

1.2:1

—

—

IP2

1 GHz, Two Tone, +7 dBm / tone, 20 MHz Spacing, 3 V

dBm

—

93

—

IP3

1 GHz, Two Tone, +7 dBm / tone, 20 MHz Spacing, 3 V

dBm

—

53

—

P1dB

dBm

dBm

—

—

27.5

28.5

—

—

Trise, Tfall

10% to 90% RF and 90% to 10% RF

nS

—

22

—

Ton, Toff

50% control to 90% RF, 50% control to 10% RF

nS

—

5

—

Transients

In-band

mV

—

36

—

Control Current

—

µA

—

0.20

5

t > 90 mS after OFF to ON Switching (settled)

Ω

—

2.50

4.7

Gate Lag

|ΔRon| between 15 µS and 90 mS after OFF to ON Switching

Ω

—

0.15

0.7

4.

results.

5.

For positive voltage control, external DC blocking capacitors are required on all RF ports.

6.

Insertion loss can be optimized by varying the DC blocking capacitor value, e.g. 1000 pF for 100 MHz - 1 GHz, 39 pF for 0.5 - 3 GHz.

Qualification

Qualified to M/A-COM specification REL-201,

Process Flow –2.

Handling Procedures

Please observe the following precautions to avoid

damage:

Static Sensitivity

Gallium Arsenide Integrated Circuits are sensitive

to electrostatic discharge (ESD) and can be

damaged by static electricity. Proper ESD control

techniques should be used when handling these

devices.

Control

V1

Control

V2

RFC-RF1

RFC-RF2

1

0

On

Off

0

1

Off

On

7.

Differential voltage, V (state 1) - V (state 0), must be 2.5 V

minimum, but must not exceed 8.5 V.

8.

0 = 0 V to 0.5 V; 1 = 2.5 V to 5 V or

0 = -5 V to -2.5 V, 1 = -0.5 to 0 V.