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2SB526 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB526
Descripción Electrónicos  Collector-Emitter Breakdown Voltage- : V(BR)CEO= -80V(Min)
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB526 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：
www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB526
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -80V(Min)
·Good Linearity of hFE
·Complement to Type 2SD356
APPLICATIONS
·Designed for AF high power dirver applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-90
V
VCEO
Collector-Emitter Voltage
-80
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-0.8
A
PC
Collector Power Dissipation
@ Ta=25℃
1
W
Collector Power Dissipation
@ TC=25℃
10
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃


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