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2SA1009 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SA1009
Descripción Electrónicos  Fast Switching Speed
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SA1009 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SA1009 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SA1009 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
2
isc Silicon PNP Power Transistor
2SA1009
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= -0.3A; IB= -0.06A, L=1mH
-350
V
VCEX(SUS)-1
Collector-Emitter Sustaining Voltage
IC= -0.3A; IB1=-IB2= -0.06A,
L=180
μ H, clamped
-350
V
VCEX(SUS)-2
Collector-Emitter Sustaining Voltage
IC= -0.6A; IB1= -0.2A; -IB2= 0.06A,
L= 180
μ H, clamped
-350
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= -0.3A; IB= -0.06A
-1
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= -0.3A; IB= -0.06A
-1.2
V
ICBO
Collector Cutoff Current
VCB= -350V; IE= 0
-10
μ A
ICER
Collector Cutoff Current
VCE=-350 ;RBE= 51Ω ,Ta=125℃
-1.0
mA
ICEX
Collector Cutoff Current
VCE= -250V; VBE(off)= -1.5V
VCE=-250; VBE(off)= -1.5V,
Ta=125℃
-10
-1.0
μ A
mA
IEBO
Emitter Cutoff Current
VEB= -5.0V; IC= 0
-10
μ A
hFE-1
DC Current Gain
IC= -0.1A; VCE= -5V
20
200
hFE-2
DC Current Gain
IC= -0.3A; VCE= -5V
10
 h
FE-1 Classifications
M
L
K
J
H
20-40
30-60
40-80
60-120
100-200



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