2SC1975 datasheet(1/2 Pages) ISC

No. de pieza	2SC1975

Descripción Electrónicos	Withstands worst overload conditions.

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

2SC1975

DESCRIPTION

·Collector-Base Breakdown Voltage

: V(BR)CBO=160V(Min)

·Withstands worst overload conditions.

APPLICATIONS

·Design for used in transceiver power output applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

120

V

VCER

Collector-Emitter Voltage

90

V

VEBO

Emitter-Base Voltage

5

V

ICM

Collector Current

3

A

PC

Total Power Dissipation

@ TC=25℃

12

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SC1975 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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