2SB692 datasheet(2/2 Pages) ISC

No. de pieza	2SB692

Descripción Electrónicos	Complement to Type 2SD728

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

isc Silicon PNP Power Transistor

2SB692

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= -30mA; IB= 0

-100

V(BR)CBO

Collector-Base Breakdown Voltage

IC= -1mA; IE= 0

-150

V(BR)EBO

Emitter-Base Breakdown Voltage

IE= -1mA; IC= 0

-5

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -4A; IB= -0.4A

-1.5

VBE(on)

Base -Emitter On Voltage

IC= -1A; VCE= -5V

-1.5

ICBO

Collector Cutoff Current

VCB= -150V; IE=0

-100

μ A

IEBO

Emitter Cutoff Current

VEB= -5V; IC=0

-100

μ A

hFE-1

DC Current Gain

IC= -1A; VCE= -5V

200

hFE-2

DC Current Gain

IC= -4A; VCE= -5V

COB

Output Capacitance

IE=0; VCB= -10V; ftest= 1.0MHz

300

Current-Gain

—Bandwidth Product

IC=-1A; VCE= -5V

MHz

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