2SD861 datasheet(1/2 Pages) ISC

No. de pieza	2SD861

Descripción Electrónicos	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 250V(Min)

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon NPN Power Transistor

2SD861

DESCRIPTION

·

Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 250V(Min)

·

High Power Dissipation-

: PC= 45W@ TC= 25℃

APPLICATIONS

·

Designed for audio frequency power amplifier applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

350

V

VCEO

Collector-Emitter Voltage

250

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

ICM

Collector Current-Peak

3.0

A

PC

Collector Power Dissipation

@ TC=25℃

45

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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2SD861 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

2SD861 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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