BD950 datasheet(1/2 Pages) ISC

No. de pieza	BD950

Descripción Electrónicos	Collector-Emitter Breakdown Voltage-: V(BR)CEO= -60V(Min)

PDF	2 Pages

Scroll/Zoom	100%

Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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1 / 2 page

INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

1

isc Silicon PNP Power Transistor

BD950

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= -60V(Min)

·DC Current Gain-

: hFE= 40(Min)@ IC= -500mA

·Complement to Type BD949

APPLICATIONS

·Designed for power amplifier and switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

-60

V

VCEO

Collector-Emitter Voltage

-60

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current-Continuous

-5

A

ICM

Collector Current-Peak

-8

A

PC

Collector Power Dissipation

@ TC=25℃

40

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-65~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.12

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

70

℃/W

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Descripción similar - BD950

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Inchange Semiconductor ...	2SA1080	98Kb / 2P	Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.)
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	3DD15A	191Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)
	3DD8B	190Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 50V(Min)
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	BUY24	192Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO= 60V(Min.)
	BUY77	194Kb / 2P	Collector-Emitter Breakdown Voltage-: V(BR)CEO = 250V(Min.)

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BD950 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

BD950 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

Número de pieza similar - BD950

Descripción similar - BD950

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