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CT2323-R3 Datasheet(PDF) 1 Page - CT Micro International Corporation |
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CT2323-R3 Datasheet(HTML) 1 Page - CT Micro International Corporation |
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1 / 12 page  CT Micro Rev 4 Proprietary & Confidential Page 1 Jun, 2015 CT2323-R3 P-Channel Enhancement MOSFET Package Outline Schematic Features • Drain-Source Breakdown Voltage VDSS - 20 V • Drain-Source On-Resistance RDS(ON) 30m Ω, at VGS= - 4.5V, IDS= - 4.7A RDS(ON) 35m Ω, at VGS= - 2.5V, IDS= - 4.1A RDS(ON) 40m Ω, at VGS= - 1.8V, IDS= - 2.0A • Continuous Drain Current at TA=25℃ ID = - 4.2A • Advanced high cell density Trench Technology • RoHS Compliance & Halogen Free Applications • Power Management • Portable Equipment • Battery Powered System • DC/DC Converter Description The CT2323-R3 uses high performance Trench Technology to provide excellent RDS(ON) and low gate charge which is suitable for most of the synchronous buck converter applications . Gate Source Drain Gate Drain Source |
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