MDS030600

2A

Page 2

COMCHIP

www.comchiptech.com

General Purpose Transistor

General Purpose Transistor

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage(3)

(IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–40

—

Vdc

Collector – Base Breakdown Voltage

(IC = –10 mAdc, IE = 0)

V(BR)CBO

–40

—

Vdc

Emitter – Base Breakdown Voltage

(IE = –10 mAdc, IC = 0)

V(BR)EBO

–5.0

—

Vdc

Base Cutoff Current

(VCE = –30 Vdc, VEB = –3.0 Vdc)

IBL

—

–50

nAdc

Collector Cutoff Current

(VCE = –30 Vdc, VEB = –3.0 Vdc)

ICEX

—

–50

nAdc

1. FR– 5 = 1.0

 0.75  0.062 in.

2. Alumina = 0.4

 0.3  0.024 in. 99.5% alumina.

3. Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%.

REM : Thermal Clad is a trademark of the Bergquist Company.

ON CHARACTERISTICS(3)

Symbol

Min

Max

Unit

DC Current Gain

(IC = –0.1 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 mAdc, VCE = –1.0 Vdc)

(IC = –10 mAdc, VCE = –1.0 Vdc)

(IC = –50 mAdc, VCE = –1.0 Vdc)

(IC = –100 mAdc, VCE = –1.0 Vdc)

HFE

60

80

100

60

30

—

—

300

—

—

—

Collector – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VCE(sat)

—

—

–0.25

–0.4

Vdc

Base – Emitter Saturation Voltage

(IC = –10 mAdc, IB = –1.0 mAdc)

(IC = –50 mAdc, IB = –5.0 mAdc)

VBE(sat)

–0.65

—

–0.85

–0.95

Vdc

SMALL– SIGNAL CHARACTERISTICS

Current – Gain — Bandwidth Product

(IC = –10 mAdc, VCE = –20 Vdc, f = 100 MHz)

fT

250

—

MHz

Output Capacitance

(VCB = –5.0 Vdc, IE = 0, f = 1.0 MHz)

Cobo

—

4.5

pF

Input Capacitance

(VEB = –0.5 Vdc, IC = 0, f = 1.0 MHz)

Cibo

—

10

pF

Input Impedance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hie

2.0

12

k

Ω

Voltage Feedback Ratio

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hre

0.1

10

X 10–4

Small – Signal Current Gain

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hfe

100

400

—

Output Admittance

(IC = –1.0 mAdc, VCE = –10 Vdc, f = 1.0 kHz)

hoe

3.0

60

mmhos

Noise Figure

(IC = –100 mAdc, VCE = –5.0 Vdc, RS = 1.0 kΩ, f = 1.0 kHz)

NF

—

4.0

dB

SWITCHING CHARACTERISTICS

Delay Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc,

I

= –10 mAdc, I

= –1.0 mAdc)

td

—

35

ns

Rise Time

(VCC = –3.0 Vdc, VBE = 0.5 Vdc,

IC = –10 mAdc, IB1 = –1.0 mAdc)

tr

—

35

ns

Storage Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

I

= I

= –1.0 mAdc)

ts

—

225

ns

Fall Time

(VCC = –3.0 Vdc, IC = –10 mAdc,

IB1 = IB2 = –1.0 mAdc)

tf

—

75

ns

3.Pulse Test: Pulse Width ı 300 ıs, Duty Cycle ı 2.0%.