TIL191, TIL192, TIL193, TIL191A, TIL192A, TIL193A

TIL191B, TIL192B, TIL193B

OPTOCOUPLERS

SOES026B – APRIL 1989 – REVISED APRIL 1998

1

POST OFFICE BOX 655303

Phototransistor

Peak (2.5 kV rms)

description

These optocouplers consist of one gallium-arsenide light-emitting diode and one silicon npn phototransistor per

channel. The TIL191 has a single channel in a 4-pin package, the TIL192 has two channels in an 8-package,

and the TIL193 has four channels in a 16-pin package. The standard devices, TIL191, TIL192, and TIL193, are

tested for a current-transfer ratio of 20% minimum. Devices selected for a current-transfer ratio of 50% and

100% minimum are designated with the suffix A and B respectively.

schematic diagrams

TIL192

1

2

3

4

8

7

6

5

1ANODE

1CATHODE

2ANODE

2CATHODE

1COLLECTOR

1EMITTER

2COLLECTOR

2EMITTER

TIL191

1

2

4

3

ANODE

CATHODE

COLLECTOR

EMITTER

TIL193

1

2

3

4

16

15

14

13

1ANODE

1CATHODE

2ANODE

2CATHODE

1COLLECTOR

1EMITTER

2COLLECTOR

2EMITTER

5

6

7

8

12

11

10

9

3ANODE

3CATHODE

4ANODE

4CATHODE

3COLLECTOR

3EMITTER

3COLLECTOR

3EMITTER

absolute maximum ratings at 25

Input-to-output voltage (see Note 1)

±3.535 kV peak or dc (±2.5 kV rms)

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector-emitter voltage (see Note 2)

35 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter-collector voltage

7 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode reverse voltage

5 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode continuous forward current at (or below) 25

°C free-air temperature (see Note 3)

50 mA

. . . . . . .

Continuous total power dissipation at (or below) 25

°C free-air temperature:

Phototransistor (see Note 4)

150 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Input diode plus phototransistor per channel (see Note 5)

200 mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55

°C to 125°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds

260

°C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. This rating applies for sine-wave operation at 50 Hz or 60 Hz. This capability is verified by testing in accordance with UL requirements.

2. This value applies when the base-emitter diode is open circuited.

3. Derate linearly to 100

°C free-air temperature at the rate of 0.67 mA/°C.

4. Derate linearly to 100

°C free-air temperature at the rate of 2 mW/°C.

5. Derate linearly to 100

°C free-air temperature at the rate of 2.67 mW/°C.

Copyright

© 1998, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.