3N80 datasheet(1/2 Pages) ISC

No. de pieza	3N80

Descripción Electrónicos	Fast Switching

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel MOSFET Transistor

3N80

·FEATURES

·Drain Current ID=3.0A@ TC=25℃

·Drain Source Voltage-

: VDSS= 800V(Min)

·Static Drain-Source On-Resistance

: RDS(on) = 7.0Ω(Max)

·Fast Switching

·APPLICATIONS

·Switching power supplies,converters,AC and DC motor controls

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

800

V

VGS

Gate-Source Voltage-Continuous

±30

V

ID

Drain Current-Continuous

3

A

IDM

Drain Current-Single Plused

8

A

PD

Total Dissipation @TC=25℃

75

W

Tj

Max. Operating Junction Temperature

150

℃

Tstg

Storage Temperature

-55~150

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

1.67

℃/W

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3N80 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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