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HTFS200-P Datasheet(PDF) 1 Page - LEM

No. de pieza HTFS200-P
Descripción Electrónicos  Current Transducer
PDF  3 Pages
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Fabricante Electrónico  LEM [LEM]
Página de inicio  http://www.lem.co.jp/HQ/en
Logo LEM - LEM

HTFS200-P Datasheet(HTML) 1 Page - LEM

  HTFS200-P Datasheet HTML 1Page - LEM HTFS200-P Datasheet HTML 2Page - LEM HTFS200-P Datasheet HTML 3Page - LEM  
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120201/9
LEM reserves the right to carry out modifications on its transducers, in order to improve them, without prior notice.
www.lem.com
Page 1/3
I
PN = 200-400-600-800 A
Features
Hall effect measuring principle
Galvanic isolation between primary
and secondary circuit
Low power consumption
Single power supply +5V
Ratiometric offset
TA = -40..+105 °C
Fixation by M3 nuts and screws
Isolated plastic case recognized
according to UL 94-V0.
Advantages
Small size and space saving
Only one design for wide current
ratings range
High immunity to external
interference.
VREF. IN/OUT.
Applications
Forklift drives
AC variable speed drives
Static converters for DC motor
drives
Battery supplied applications
Uninterruptible Power Supplies
(UPS)
Switched Mode Power Supplies
(SMPS)
Power supplies for welding
applications.
Application domain
Industrial.
Current Transducer HTFS 200..800-P
For the electronic measurement of currents : DC, AC, pulsed, mixed,
with galvanic isolation between the primary circuit (high power)
and the secondary circuit (electronic circuit).
Primary nominal
Primary current
Type
current rms
measuring range
I
PN (A)IPM (A)
200
± 300
HTFS 200-P
400
± 600
HTFS 400-P
600
± 900
HTFS 600-P
800
± 1200
HTFS 800-P
V
OUT
Output voltage (Analog) @
I
P
V
REF ± (1.25・IP/ IPN) V
I
P = 0
V
REF ± 0.025
V
V
REF
Reference voltage1) - Output voltage
1/2
V
C ± 0.025
V
V
REF Output impedance
typ. 200
V
REF Load impedance
≥ 200
kΩ
R L
Load resistance
≥ 2
kΩ
ROUT
Output internal resistance
<
10
C L
Capacitive loading
<
1
µF
VC
Supply voltage (± 5 %)
5
V
IC
Current consumption @
VC = 5 V
22
mA
X
Accuracy 2) @
I
PN, TA = 25°
C
≤ ± 1
% of
I
PN
ε
L
Linearity error (0 .. 1.5 x
I
PN)
≤ ± 0.5
% of
I
PN
TCV
OE Temperature coefficient of VOE @ IP = 0
≤ ± 0.3
mV/K
TCV
REF Temperature coefficient of VREF
≤ ± 0.01
%/K
TCV
OUT/ VREF Temperature coefficient of
V
OUT / VREF @ IP = 0
≤ ± 0.2
mV/K
TCV
OUT Temperature coefficient of VOUT
≤ ± 0.05% of reading/K
V
OM
Magnetic offset voltage @
I
P = 0,
after an overload of 3 x
I
PN DC
< ± 0.5
% of
I
PN
t
ra
Reaction time @ 10 % of I
PN
< 3
µs
t
r
Response time to 90 % of
I
PN step
< 7
µs
di/dt
di/dt accurately followed
> 100
A/µs
Vno
Output voltage noise
(DC ..10 kHz)
< 15
mVpp
(DC .. 1 MHz)
< 40
mVpp
BW
Frequency bandwidth (- 3 dB) 3)
DC .. 50
kHz
TA
Ambient operating temperature
- 40 .. + 105
°C
TS
Ambient storage temperature
- 40 .. + 105
°C
m
Mass
60
g
Standard
EN 50178: 1997
Notes : 1) It is possible to overdrive
VREF with an external reference voltage
between 2 - 2.8 V providing its ability to sink or source approx. 2.5 mA.
2) Excluding offset and Magnetic offset voltage.
3) Small signal only to avoid excessive heatings of the magnetic core.
All Data are given with a RL = 10 kΩ
Electrical data
Accuracy - Dynamic performance data
General data


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