BUZ72 datasheet(1/2 Pages) ISC

No. de pieza	BUZ72

Descripción Electrónicos	Low Drive Requirements

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel Mosfet Transistor

BUZ72

·FEATURES

·Low R

DS(on)

·V

GS

Rated at

±20V

·Silicon Gate for Fast Switching Speed

·High Input Impedance

·Low Drive Requirements

·Majority Carrier Device

·DESCRITION

·Designed especially for applications such as

switching regulators, switching converters,

motor drivers ,relay drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

100

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

9

A

IDM

Drain Current-Single Plused

36

A

PD

Total Dissipation @TC=25℃

40

W

Tj

Max. Operating Junction Temperature

-55~150

℃

Tstg

Storage Temperature

-55~150

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

3.1

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

75

℃/W

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