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60N10 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 60N10
Descripción Electrónicos  Fast Switching Speed
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

60N10 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

  60N10 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 60N10 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
60N10
·DESCRIPTION
·Drain Current ID= 40A@ TC=25℃
·Drain Source Voltage-
: VDSS= 100V(Min)
·Fast Switching Speed
·APPLICATIONS
·General purpose power amplifier
ABSOLUTE MAXIMUM RATINGS(TC=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
60
V
VGS
Gate-Source Voltage
±30
V
ID
Drain Current-continuous@ TC=25℃
40
A
ID(puls)
Pulse Drain Current
180
A
Ptot
Total Dissipation@TC=25℃
150
W
Tj
Max. Operating Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
0.83
℃/W
Rth j-a
Thermal Resistance, Junction to Ambient
40
℃/W
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