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FRM430 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza FRM430
Descripción Electrónicos  Second Generation Rad Hard MOSFET Results
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

FRM430 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
FRM430
DESCRIPTION
·3A, 500V, RDS(on) = 2.5
Ω
·Second Generation Rad Hard MOSFET Results
From New Design Concepts
APPLICATIONS
It is specially designed and processed to
exhibit minimal characteristic changes to total dose and neutron
exposures. Design and processing efforts are also directed to
enhance survival to heavy ion (SEE) and/or dose rate
(GAMMA DOT) exposure.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
ARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=37℃
3
A
Ptot
Total Dissipation@TC=25℃
125
W
Tj
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃/W
Rth j-a
Thermal Resistance,Junction to Ambient
60
℃/W
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