IRF610 datasheet(1/2 Pages) ISC

No. de pieza	IRF610

Descripción Electrónicos	isc N-Channel MOSFET Transistor

PDF	2 Pages

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Fabricante Electrónico	ISC [Inchange Semiconductor Company Limited]

Página de inicio	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc website：www.iscsemi.cn

isc & iscsemi is registered trademark

1

isc N-Channel Mosfet Transistor

IRF610

·FEATURES

·Low RDS(on)

·VGS Rated at ±20V

·Silicon Gate for Fast Switching Speed

·Rugged

·Low Drive Requirements

·DESCRITION

·Designed especially for high voltage,high speed applications,

such as off-line switching power supplies , UPS,AC and DC

motor controls,relay and solenoid drivers.

·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VDSS

Drain-Source Voltage

200

V

VGS

Gate-Source Voltage-Continuous

±20

V

ID

Drain Current-Continuous

3.3

A

IDM

Drain Current-Single Plused

8

A

PD

Total Dissipation @TC=25℃

43

W

Tj

Max. Operating Junction Temperature

-55~175

℃

Tstg

Storage Temperature

-55~175

℃

·THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

2.9

℃/W

Rth j-a

Thermal Resistance,Junction to Ambient

80

℃/W

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IRF610 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

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