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KSD560 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSD560 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  INCHANGE Semiconductor isc Product Specification isc website：www.iscsemi.cn 1 isc Silicon NPN Darlington Power Transistor KSD560 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) · High DC Current Gain : hFE= 2000(Min) @IC= 3.0A · Low Saturation Voltage · Complement to Type KSB601 APPLICATIONS · Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A ICP Collector Current-Peak 8 A IB Base Current-Continuous 0.5 A PC Collector Power Dissipation @ Ta=25℃ 1.5 W Collector Power Dissipation @ TC=25℃ 30 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
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Descripción similar - KSD560 |
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