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BUX41N Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza BUX41N
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUX41N Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUX41N Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUX41N Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.cn
2
isc Silicon NPN Power Transistor
BUX41N
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 200mA ; IB= 0, L= 25mH
160
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE=50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC=8A; IB=0.8A
1.2
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC=12A; IB=1.5A
1.6
V
VBE(sat)
Base-Emitter Saturation Voltage
IC=12A; IB=1.5A
2.0
V
ICEO
Collector Cutoff Current
VCE=130V; IB= 0
1.0
mA
ICEX
Collector Cutoff Current
VCE= 220V; VBE= -1.5V
VCE= 220V; VBE= -1.5V; TC= 125℃
1.0
5.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC=0
1.0
mA
hFE-1
DC Current Gain
IC= 8A ; VCE= 4V
15
45
hFE-2
DC Current Gain
IC= 12A ; VCE= 4V
8
fT
Current-Gain—Bandwidth Product
IC= 1A ; VCE= 15V; f=10MHz
8
MHz
Switching Times; Resistive Laod
ton
Turn-on Time
IC= 12A ;IB1= -IB2= 1.5A;
VCC= 30V;
RB= 3.9Ω; RC= 2.5Ω
1.3
μs
ts
Storage Time
1.5
μs
tf
Fall Time
0.8
μs



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