IXTP32N65XM datasheet(1/5 Pages) IXYS

No. de pieza	IXTP32N65XM

Descripción Electrónicos	Preliminary Technical Information

PDF	5 Pages

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Fabricante Electrónico	IXYS [IXYS Corporation]

Página de inicio	http://www.ixys.com

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1 / 5 page

Symbol

Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

C to 150C

650

V

DGR

T

J

= 25

C to 150C, R

GS = 1M

650

V

GSS

Continuous

30

V

GSM

Transient

40

V

I

D25

T

C = 25C14

A

I

DM

T

C = 25C, Pulse Width Limited by TJM

64

A

dv/dt

I

S

 I

D25, VDD  VDSS, TJ  150°C

30

V/ns

P

D

T

C = 25C78

W

T

J

-55 ... +150

C

T

JM

150

C

T

stg

-55 ... +150

C

T

L

Maximum Lead Temperature for Soldering

300

°C

T

SOLD

Plastic Body for 10s

260

°C

M

d

Mounting Torque

1.13 / 10

Nm/lb.in

Weight

2.5

g

DS100589D(6/15)

X-Class

Power MOSFET

N-Channel Enhancement Mode

IXTP32N65XM

V

DSS

= 650V

I

D25

= 14A

R

DS(on) 

 135m



Features



Low R

DS(ON) and QG



Low Package Inductance

Advantages



High Power Density



Easy to Mount



Space Savings

Applications



Switch-Mode and Resonant-Mode

Power Supplies



DC-DC Converters



PFC Circuits



AC and DC Motor Drives



Robotics and Servo Controls

Symbol

Test Conditions

Characteristic Values

(T

J = 25C, Unless Otherwise Specified)

Min.

Typ.

Max.

BV

DSS

V

GS = 0V, ID = 250μA

650

V

GS(th)

V

DS = VGS, ID = 250μA

3.0

5.5

V

I

GSS

V

GS = 30V, VDS = 0V

100 nA

I

DSS

V

DS = VDSS, VGS = 0V

5

A

T

J = 125C

50

A

R

DS(on)

V

GS = 10V, ID = 16A, Note 1

135 m



G = Gate

D = Drain

S = Source

OVERMOLDED

G

D S

Preliminary Technical Information

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