BGS6 datasheet(1/8 Pages) BEREX

No. de pieza	BGS6

Descripción Electrónicos	50-4000 MHz SILICON GERMANIUM Gain Block

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Fabricante Electrónico	BEREX [BeRex Corporation]

Página de inicio	http://www.berex.com

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1

Rev. A

BeRex

●website: www.berex.com

●email: sales@berex.com

Specifications and information are subject to change and products may be discontinued without notice. BeRex is a trademark of BeRex.

 3 ~ 3.3V supply

 No Dropping Resistor Required

 No matching circuit needed

 Lead-free/Green/RoHS compliant SOT-343 package

BeRex’s BGS6 is a high SiGe HBT MMIC am-

plifier, internally matched to 50 Ohms with-

out the need for external components. De-

signed to run directly from a 3.3V supply.

The BGS6 is designed for high linearity 3.3V

gain block applications . It is packaged in a

RoHS-compliant with SOT-343 surface

Product Description

Device Features

 Drive Amplifier

 Cellular, PCS, GSM, UMTS, WCDMA, LTE

Applications

Applications Circuit

1 Device performance _ measured on a BeRex evaluation board at 25°C, 50 Ω system.

2 OIP3 _ measured with two tones at an output of 0 dBm per tone separated by 1 MHz.

Typical Performance

1

Absolute Maximum Ratings

Min.

Typical

Max.

Unit

Bandwidth

70

4000

MHz

IC @ (Vc = 3.3V)

23

27

31

mA

VC

3.3

V

RTH

130

°C/W

Parameter

Unit

Rating

Operating Case Temperature

°C

-40 to +85

Storage Temperature

°C

-55 to +155

Junction Temperature

°C

+150

Operating Voltage

V

+3.6

Supply Current

mA

100

Input RF Power

dBm

15

Operation of this device above any of these parameters may result in permanent damage.

Pin Description

RF IN

3

RF OUT

1

GND

2,4

Part Marking (X: Wafer number)

Parameter

Frequency

Unit

400

900

1900

2450

2650

MHz

Gain

23.3

21.8

18.0

16.2

15.6

dB

S11

-22.0

-19.0

-17.0

-16.5

dB

S22

-19.0

-16.0

-10.5

-10.0

dB

OIP3

2

26.0

24.0

23.0

dBm

P1dB

16.5

17.0

14.0

12.5

12.0

dBm

N.F

3.0

2.9

3.0

3.3

3.5

dB

Application Circuit Values Example

Freq.

300~500MHz

700MHz ~ 3GHz

C1/C2

2nF

100pF

C3

100pF

C4

1nF

L1

820nH

56nH

(1608 Chip Ind.)

BGS6

50-4000 MHz SILICON GERMANIUM Gain Block

BGS6

L1

C1

C3

C4

RFin

RFout

+3.3V

C2

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