3.4

+0.3

-0.1

0.4±0.1

Cathode indification

FEATURES

MECHANICAL DATA

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Ratings at 25

MAXIMUM RATINGS

UNITS

Reverse voltage

V

R

V

Peak reverse voltage

V

RM

V

Average forw ard rectified current

Half w ave rectification w ith resistive load

µ s

A

Pow er dissipaton at t

tot

mW

Junction temperature

T

J

Storage temperature range

T

STG

UNITS

Forw ard voltage @ I

V

Leakage current

at V

I

R

at V

I

R

A

T

I

R

A

Capacitance at V

C

tot

pF

Voltage rise w hen sw itching on

tested w ith 50mA pulses

tp=0.1

S,rise time

30ns, fp=5 to 100KHz

Reverse recovery time

from I

V

,at I

Thermal resistance junction to ambient

R

JA

K/W

Rectification effciency at 100MHz,V

V

-

ns

1)Valid prov ided that electrodes are kept at ambient temperature

500

1)

0.45

-

-

-

-2.5

-

-

4.0

-

25.0

5.0

-

-

4.0

-

-

50.0

-

150

-

-

mA

ELECTRICAL CHARACTERISTICS

1) Valid prov ided that electrodes are kept at ambient temperature.

MIN

TYP

MAX

I

Polarity:Color band denotes cathode

V

fr

t

rr

0.62

-

175

2.0

500

1)

LL4448

LL4448

CURRENT: 0.15 A

Case:MINI-MELF glass case

SMALL SIGNAL SWITCHING DIODE

Silicon epitaxial diode

MINI-MELF

500mW power dissipation

High speed switching diode

V

Weight: Approx 0.031 grams

0.72

75

100

O

-

0.93

1.0

Dimensions in millimeters

Diode Semiconductor Korea

www.diode.kr