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2SC5585 Datasheet(PDF) 1 Page - Rohm |
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2SC5585 Datasheet(HTML) 1 Page - Rohm |
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1 / 3 page ![]() 2SC5585 / 2SC5663 Transistors Rev.B 1/2 Low frequency transistor (12V, 0.5A) 2SC5585 / 2SC5663 The transistor of 500mA class which went only into 2125 size conventionally was attained in 1608 sizes or 1208 sizes. Applications For switching For muting Features 1) High current. 2) Low VCE(sat). VCE(sat) ≤ 250mV at IC = 200mA / IB = 10mA External dimensions (Unit : mm) ROHM : EMT3 EIAJ : SC-75A JEDEC : SOT-416 2SC5585 Abbreviated symbol : BX Abbreviated symbol : BX ROHM : VMT3 2SC5663 (1) Base (2) Emitter (3) Collector (1) Emitter (2) Base (3) Collector 0.1Min. 1.6 0.8 (2) (3) (1) (3) 1.2 0.8 0.2 0.15Max. 0.2 (2) (1) Absolute maximum ratings (Ta=25 °C) Parameter Collectot-base voltage Collector-emitter voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO IC PC Tj Tstg 15 V V mA mW °C °C 12 Emitter-base voltage VEBO V 6 500 ICP A 1 ∗ 150 150 −55 to +150 Symbol Limits Unit ∗ Single pulse Pw = 1ms Electrical characteristics (Ta=25 °C) Parameter Collector-base breakdown voltage Collectoe-emitter brakdown voltage Emitter-base breakdown voltage Collector cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO hFE VCE(sat) Cob Min. 15 12 6 − 270 − − − − − − − 90 7.5 − − − 100 680 250 − VIC = 10 µA IC = 1mA IE = 10 µA VCB = 15V VCE = 2V, IC = 10mA IC = 200mA, IB = 10mA VCB = 10V, IE = 0A, f = 1MHz V V nA Emitter cutoff current IEBO −− 100 VCB = 6V nA − mV fT − 320 − VCE = 2V, IE = −10mA, f = 100MHz MHz pF Typ. Max. Unit Conditions |
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