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MCP14A0153 Datasheet(PDF) 13 Page - Microchip Technology

No. de pieza MCP14A0153
Descripción Electrónicos  1.5A Dual MOSFET Driver with Low Threshold Input And Enable
PDF  30 Pages
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Fabricante Electrónico  MICROCHIP [Microchip Technology]
Página de inicio  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

MCP14A0153 Datasheet(HTML) 13 Page - Microchip Technology

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 2015 Microchip Technology Inc.
DS20005470A-page 13
MCP14A0153/4/5
FIGURE 4-3:
Enable Timing Waveform.
4.4
Decoupling Capacitors
Careful PCB layout and decoupling capacitors are
required when using power MOSFET drivers. Large
current is required to charge and discharge capacitive
loads quickly. For example, approximately 720 mA are
needed to charge a 1000 pF load with 18V in 25 ns.
To operate the MOSFET driver over a wide frequency
range with low supply impedance, it is recommended to
place 1.0 µF and 0.1 µF low ESR ceramic capacitors in
parallel between the driver VDD and GND. These
capacitors should be placed close to the driver to
minimize circuit board parasitics and provide a local
source for the required current.
4.5
PCB Layout Considerations
Proper Printed Circuit Board (PCB) layout is important
in high-current, fast switching circuits to provide proper
device operation and robustness of design. Improper
component placement may cause errant switching,
excessive voltage ringing or circuit latch-up. The PCB
trace loop length and inductance should be minimized
by the use of ground planes or traces under the
MOSFET gate drive signal. Separate analog and
power grounds and local driver decoupling should also
be used.
Placing a ground plane beneath the MCP14A0153/4/5
devices will help as a radiated noise shield, as well as
providing some heat sinking for power dissipated within
the device.
4.6
Power Dissipation
The total internal power dissipation in a MOSFET driver
is the summation of three separate power dissipation
elements, as shown in Equation 4-1.
EQUATION 4-1:
4.6.1
CAPACITIVE LOAD DISSIPATION
The power dissipation caused by a capacitive load is a
direct function of the frequency, total capacitive load
and supply voltage. The power lost in the MOSFET
driver for a complete charging and discharging cycle of
a MOSFET is shown in Equation 4-2.
EQUATION 4-2:
4.6.2
QUIESCENT POWER DISSIPATION
The power dissipation associated with the quiescent
current draw depends on the state of the Input and
Enable
pins.
See
Section 1.0
“Electrical
Characteristics”
for typical quiescent current draw
values in different operating states. The quiescent
power dissipation is shown in Equation 4-3.
EQUATION 4-3:
TABLE 4-1:
ENABLE PIN LOGIC
EN
IN
OUT
OUT
HH
L
H
HL
H
L
LX
L
L
tD3
10%
90%
Enable
Output
5V
18V
0V
0V
VEH (Typ.)
VEL (Typ.)
tD4
P
T
P
L
P
Q
P
CC
++
=
Where:
PT = Total power dissipation
PL = Load power dissipation
PQ = Quiescent power dissipation
PCC = Operating power dissipation
P
L
fC
T
V
DD
2
=
Where:
f
=
Switching frequency
CT = Total load capacitance
VDD = MOSFET driver supply voltage
P
Q
I
QH
DI
QL
1D

+
 V
DD
=
Where:
IQH = Quiescent current in the High state
D
=
Duty cycle
IQL = Quiescent current in the Low state
VDD =
MOSFET driver supply voltage



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