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2N6312 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N6312
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N6312 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2N6312
DESCRIPTION
·
Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -40V(Min)
·
Low Collector Saturatioin Voltage-
: VCE(sat)= -0.7V(Max.)@ IC= -1.5A
·
DC Current Gain-
: hFE= 25-100@ IC= -1.5A
APPLICATIONS
·
Designed for general-purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-40
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-5
A
ICM
Collector Current-Peak
-10
A
IB
Base Current-Continuous
-2
A
PC
Collector Power Dissipation
@ TC=25℃
75
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.32
℃
/W


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