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2SB821 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB821
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB821 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB821
DESCRIPTION
·
High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -40V(Min)
·
Good Linearity of hFE
·
Low Saturation Voltage
APPLICATIONS
·
Designed for use in audio amplifier, voltage regulator,
DC-DC converter and relay driver.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-50
V
VCEO
Collector-Emitter Voltage
-40
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current-Continuous
-300
mA
PC
Collector Power Dissipation
@ TC=25℃
250
mW
TJ
Junction Temperature
125
℃
Tstg
Storage Temperature Range
-55~125
℃


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