2SA950 datasheet(1/2 Pages) HOTTECH

No. de pieza	2SA950

Descripción Electrónicos	Plastic-Encapsulate Transistors

PDF	2 Pages

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Fabricante Electrónico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

Página de inicio	http://www.hottech.net.cn/

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2SA950

TRANSISTOR (PNP)

FEATURES

1W output applications

complementary to 2SC2120

MAXIMUM RATINGS (

TA=25

unless otherwise noted

℃

)

Symbol

Parameter

Value

Units

VCBO

Collector-Base Voltage

-35

V

VCEO

Collector-Emitter Voltage

-30

V

VEBO

Emitter-Base Voltage

-5

V

IC

Collector Current -Continuous

-0.8

A

PC

Collector Power Dissipation

0.6

W

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature

-55 to +150

℃

ELECTRICAL CHARACTERISTICS (Tamb=25

℃ unless otherwise specified)

Parameter

Symbol

Test

conditions

MIN

TYP

MAX

UNIT

Collector-base breakdown voltage

V(BR)CBO

IC= -0.1mA , IE=0

-35

V

Collector-emitter breakdown voltage

V(BR)CEO

IC= -10mA , IB=0

-30

V

Emitter-base breakdown voltage

V(BR)EBO

IE= -0.1mA, IC=0

-5

V

Collector cut-off current

ICBO

VCB= -35V, IE=0

-0.1

μA

Emitter cut-off current

IEBO

VEB= -5V, IC=0

-0.1

μA

hFE(1)

VCE=-1V, IC=-100mA

100

320

DC current gain

hFE(2)

VCE=-1V, IC= -700mA

35

Collector-emitter saturation voltage

VCE(sat)

IC= -500mA, IB= -20mA

-0.7

V

Emitter-base voltage

VBE

VCE=-1V, IC=-10mA

-0.5

-0.8

V

Collector Output Capacitance

Cob

VCB=-10V,IE=0

f=1MHz

19

pF

Transition frequency

fT

VCE=-5V,IC=-10mA

120

MHz

CLASSIFICATION OF hFE(1)

Rank

O

Y

Range

100-200

160-320

1 2 3

TO-92

1.EMITTER

2. COLLECTOR

3. BASE

Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

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2SA950 Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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