PXT2907A datasheet(1/2 Pages) HOTTECH

No. de pieza	PXT2907A

Descripción Electrónicos	Plastic-Encapsulate Transistors

PDF	2 Pages

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Fabricante Electrónico	HOTTECH [GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.]

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Page:P2-P1

Plastic-Encapsulate Transistors

GUANGDONG

HOTTECH

INDUSTRIAL

CO,. LTD.

FEATURES

Epitaxial planar die construction.

Complementary NPN type available

PXT2222A.

Ideal for medium power amplification and switching.

MAXIMUM RATINGS (TA=25

unless otherwise noted)

Parameter

Symbol

Value

Unit

Collector-Base Voltage

V

CBO

-60

V

Collector-Emitter Voltage

V

CEO

-60

V

Emitter-Base Voltage

V

EBO

-5

V

Collector Current -Continuous

I

C

-600

mA

Collector Power Dissipation

P

C

500

mW

Storage Temperature

Tstg

-55-150

ELECTRICAL CHARACTERISTICS (Tamb=25

unless otherwise specified)

Parameter

Symbol

Test conditions

Min

Max

Unit

Collector-base breakdown voltage

VCBO

IC=-10μA IE=0

-60

V

Collector-emitter

breakdown voltage

VCEO

IC=-10mA IB=0

-60

V

Emitter-base breakdown voltage

VEBO

IE=-10μA IC=0

-5

μV

Collector cut-off current

ICBO

VCB=-50V IE=0

-10

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-50

nA

DC current gain

hFE

VCE=-1V IC=-100mA

VCE=-1V IC=-1mA

VCE=-1V IC=-10mA

VCE=-2V IC=-150mA

VCE=-10V IC=-500mA

75

100

50

-

-300

-

Collector-emitter

saturation voltage

VCE(sat)

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

-0.4

-1.6

V

Base-emitter saturation voltage

VBE(sat)

IC=-150mA IB=-15mA

IC=-500mA IB=-50mA

-1.3

-2.6

V

Transition frequency

fT

VCE=-10V,

IC=-20mA, f=100MHz

200

MHz

Output Capacitance

Cobo

VCB=-10V f=1.0MHz IE=0

-

8.0

pF

Input Capacitance

Cibo

VEB=-10V f=1.0MHz IC=0

-

30

pF

Delay time

td

VCE=-30V, IC=-150mA,

IB1=-15mA

10

ns

Rise time

tr

40

ns

Storage time

ts

VCE=-6V, IC=-150mA

IB1=-IB2=-15mA

80

ns

Fall time

tf

30

ns

1. BASE

2. COLLECTO

SOT-89

3. EMITTER

PXT2907A(PNP)

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PXT2907A Datasheet(PDF) 1 Page - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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