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DMC3028LSDX Datasheet(PDF) 3 Page - Diodes Incorporated

No. de pieza DMC3028LSDX
Descripción Electrónicos  COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
PDF  9 Pages
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Fabricante Electrónico  DIODES [Diodes Incorporated]
Página de inicio  http://www.diodes.com
Logo DIODES - Diodes Incorporated

DMC3028LSDX Datasheet(HTML) 3 Page - Diodes Incorporated

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DMC3028LSDX
Document number: DS36210 Rev. 4 - 2
3 of 9
www.diodes.com
November 2015
© Diodes Incorporated
DMC3028LSDX
Electrical Characteristics
– Q2 (@T
A = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
BVDSS
-30
V
VGS = 0V, ID = -250µA
Zero Gate Voltage Drain Current
IDSS


-1
µA
VDS = -24V, VGS = 0V
Gate-Source Leakage
IGSS
100
nA
VGS = 20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
VGS(th)
-1
-3
V
VDS = VGS, ID = -250µA
Static Drain-Source On-Resistance
RDS (ON)
21
25
m
Ω
VGS = -10V, ID = -6A
29
41
VGS = -4.5V, ID = -5A
Diode Forward Voltage
VSD
-0.7
-1.2
V
VGS = 0V, IS = -1.3A
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Ciss
1,241
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Output Capacitance
Coss
146
Reverse Transfer Capacitance
Crss
110
Gate Resistance
RG

14.8

Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
Total Gate Charge (VGS = -4.5V)
Qg
10.9
nC
VDS = -15V, ID = -7A
Total Gate Charge (VGS = -10V)
Qg

22

Gate-Source Charge
Qgs
3.5
Gate-Drain Charge
Qgd
4.7
Turn-On Delay Time
tD(on)
9.7
nS
VGS = -10V, VDD = -15V, RGEN = 6Ω,
ID = -7A
Turn-On Rise Time
tr
17.1
Turn-Off Delay Time
tD(off)
60.5
Turn-Off Fall Time
tf

40.4

Notes:
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.



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