Thermal Characteristic

Thermal Resistance, Junction-to-Case

(Note 2)

2.5

/W

℃

Parameter

Symbol

Condition

Min

Typ

Max

Unit

Off Characteristics

Drain-Source Breakdown Voltage

-30

-

-

V

Zero Gate Voltage Drain Current

-

-

-1

μA

Gate-Body Leakage Current

-

-

±100

nA

On Characteristics

(Note 3)

Gate Threshold Voltage

-1.2

-1.6

-2.5

V

-

13

18

m

Ω

Drain-Source On-State Resistance

-

22

30

m

Ω

Forward Transconductance

-

25

-

S

Dynamic Characteristics

(Note4)

Input Capacitance

-

1363

-

PF

Output Capacitance

-

250

-

PF

Reverse Transfer Capacitance

F=1.0MHz

-

210

-

PF

Switching Characteristics

(Note 4)

Turn-on Delay Time

-

9

-

nS

Turn-on Rise Time

-

10

-

nS

Turn-Off Delay Time

-

50

-

nS

Turn-Off Fall Time

-

20

-

nS

Total Gate Charge

-

31.2

nC

Gate-Source Charge

-

3.2

nC

Gate-Drain Charge

-

9.2

nC

Drain-Source Diode Characteristics

Diode Forward Voltage

(Note 3)

-

-1.2

V

Diode Forward Current

(Note 2)

-

-

-20

A

Reverse Recovery Time

-

24

nS

Reverse Recovery Charge

Qrr

TJ = 25°C, IF =- 15A

di/dt = -100A/

μs

(Note3)

-

16

nC

Notes:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t

≤ 10 sec.

3. Pulse Test: Pulse Width

≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production

MSP0330D

MORE Semiconductor Company Limited

http://www.moresemi.com

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