CJS8804 datasheet(1/3 Pages) ZPSEMI

No. de pieza	CJS8804

Descripción Electrónicos	Plastic-Encapsulate MOSFETS

PDF	3 Pages

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Fabricante Electrónico	ZPSEMI [ZP Semiconductor]

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TSSOP8 Plastic-Encapsulate MOSFETS

CJS8804

Dual N-Channel MOSFET

DESCRIPTION

The CJS8804 use advanced trench technology to provide excellent

RDS(ON) and low gate charge. It is ESD protected. This device is suitable

for use as a uni-directional or bi-directional load switch,facilitated by its

common-drain configuration.

MARKING:

MAXIMUM RATINGS (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain-Source Voltage

VDS

20

V

Gate-Source Voltage

VGS

±12

V

Continuous Drain Current

ID

8

A

Pulsed Drain Current

IDM *

30

A

Thermal Resistance from Junction to Ambient

RθJA

125

℃/W

Junction Temperature

Tj

150

℃

Storage Temperature

Tstg

-55~+150

℃

Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)

TL

260

℃

* Repetitive rating : Pulse width limited by junction temperature.

TSSOP8

G1

S1 S1

D1/D2

D1/D2 S2 S2 G2

1

2

34

5

6

7

8

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CJS8804

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