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AS7C1024A-20TJI Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

No. de pieza AS7C1024A-20TJI
Descripción Electrónicos  5V/3.3V 128KX8 CMOS SRAM (Evolutionary Pinout)
PDF  9 Pages
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Fabricante Electrónico  ALSC [Alliance Semiconductor Corporation]
Página de inicio  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS7C1024A-20TJI Datasheet(HTML) 6 Page - Alliance Semiconductor Corporation

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AS7C1024A
AS7C31024A
9/26/02; 0.9.9
Alliance Semiconductor
P. 6 of 9
®
AC test conditions
Notes
1During VCC power-up, a pull-up resistor to VCC on CE1 is required to meet ISB specification.
2
This parameter is sampled and not 100% tested.
3
For test conditions, see AC Test Conditions, Figures A, B, and C.
4tCLZ and tCHZ are specified with CL = 5pF, as in Figure C. Transition is measured ±500mV from steady-state voltage.
5
This parameter is guaranteed, but not 100% tested.
6WE is High for read cycle.
7CE1 and OE are Low and CE2 is High for read cycle.
8
Address valid prior to or coincident with CE1 transition Low.
9
All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE1 or WE must be High or CE2 Low during address transitions. Either CE1 or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 CE1 and CE2 have identical timing.
13 C=30pF, except all high Z and low Z parameters, C=5pF.
14 2V data retention applies to commercial temperature operating range only.
255
– Output load: see Figure B or Figure C.
– Input pulse level: GND to 3.0V. See Figure A.
– Input rise and fall times: 2 ns. See Figure A.
– Input and output timing reference levels: 1.5V.
C(14)
320
DOUT
GND
+3.3V
168
Thevenin equivalent:
DOUT
+1.728V (5V and 3.3V)
Figure C: 3.3V Output load
255
C(14)
480
DOUT
GND
+5V
Figure B: 5V Output load
10%
90%
10%
90%
GND
+3.0V
Figure A: Input pulse
2 ns



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