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BDS18 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BDS18 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc website:www.iscsemi.com isc & iscsemi is registered trademark 2 isc Silicon PNP Power Transistor BDS18 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA;Ib=0 -120 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -0.05A -0.4 V VBE(on) Base - Emitter voltage Ic= –0.5A ;Vce= –2V -1.0 V ICBO Collector Cutoff Current VCB= -120V ; IE=0 -20 μ A ICEO Collector Cutoff Current VCE= -60V ; IB=0 0.1 mA IEBO Emitter Cutoff Current VEB= -5V; IC=0 -10 μ A hFE DC Current Gain IC= -4A ; VCE= -2V 40 250 fT Transition frequency Ic= –0.5A Vce= –4V F = 20MHz 30 MHZ Switching times ton Turn-on Time IC= -2.0A , IB1= -IB2= -0.2A,VCC≈-80V 0.5 μ s tstg Storage Time 1.5 μ s tf Fall Time 0.3 μ s |
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