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BD791 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza BD791
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BD791 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistor
BD791
DESCRIPTION
·
High Collector–Emitter Sustaining Voltage —
VCEO(sus) = 100 Vdc (Min)
•
High DC Current Gain @ IC = 200 mAdc
hFE = 40–250
•
Low Collector–Emitter Saturation Voltage —
VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc
•
APPLICATIONS
·
Designed for low power audio amplifier and low current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
8
A
IB
Base Current-Continuous
1
A
PC
Collector Power Dissipation
@ TC=25℃
15
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
8.34
℃
/W


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