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2SC4332 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited

No. de pieza 2SC4332
Descripción Electrónicos  isc Silicon NPN Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SC4332 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited

  2SC4332 Datasheet HTML 1Page - Inchange Semiconductor Company Limited 2SC4332 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
2
isc Silicon NPN Power Transistor
2SC4332
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX UNIT
VCE(sat)-1NOTE
Collector-Emitter Saturation Voltage IC= 3A; IB= 150mA
0.3
V
VCE(sat)-2NOTE
Collector-Emitter Saturation Voltage IC= 4A; IB= 200mA
0.5
V
VBE(sat)-1NOTE
Base-Emitter Saturation Voltage
IC= 3A; IB= 150mA
1.2
V
VBE(sat)-2NOTE
Base-Emitter Saturation Voltage
IC= 4A; IB= 200mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
10
μ
A
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
10
μ
A
hFE-1NOTE
DC Current Gain
IC= 0.5A; VCE= 2V
100
hFE-2NOTE
DC Current Gain
IC= 1A; VCE= 2V
100
400
hFE-3NOTE
DC Current Gain
IC= 3A; VCE= 2V
60
COB
Output Capacitance
IE= 0; VCB= 10V; f= 1.0MHz
130
pF
fT
Current-Gain—Bandwidth Product
IC= 500mA; VCE= 10V
150
MHz
NOTE:Pulse test PW≤350us,duty cycle ≤2%/pulse
hFE-2 Classifications
M
L
K
100-200
150-300 200-400



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