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6575 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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6575 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() INCHANGE Semiconductor isc website:www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2N6575 DESCRIPTION · Collector-Emitter Sustaining Voltage- : VCEO = 300V(Min.) · Fast Switching Speed · High Current Capability · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for converters, inverters, pulse-width- modulated regulators and a variety of power switching circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A PC Collector Power Dissipation@TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ |
Número de pieza similar - 6575 |
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Descripción similar - 6575 |
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