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MP7614TD Datasheet(PDF) 4 Page - Exar Corporation |
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MP7614TD Datasheet(HTML) 4 Page - Exar Corporation |
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4 / 8 page ![]() MP7614 4 Rev. 2.00 ELECTRICAL CHARACTERISTICS (CONT’D) NOTES: Specifications are subject to change without notice 1 Full Scale Range (FSR) is 10V for unipolar mode. 2 Guaranteed but not production tested. 3 Digital input levels should not go below ground or exceed the positive supply voltage, otherwise damage may occur. 4 Specified values guarantee functionality. Refer to other parameters for accuracy. 5 Linearity error is degraded by 65 µV for every mV of voltage offset at output amplifier. 6 Output leakage current refers to IOUT1. 1 LSB of current constantly flows into IOUT2 (30nA at 5 kΩ input impedance, VREF = +10 V) due to ladder termination into IOUT2. ABSOLUTE MAXIMUM RATINGS (TA = +25 °C unless otherwise noted)1, 2 VDD to GND 0 to +17 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Digital Input Voltage to GND GND –0.5 to VDD +0.5 V . . . . IOUT1, IOUT2 to GND GND –0.5 to VDD +0.5 V . . . . . . . . . . . VREF to GND +25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VRFB to GND +25 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Storage Temperature –65 °C to +150°C . . . . . . . . . . . . . . . . . Lead Temperature (Soldering, 10 seconds) +300 °C . . . . . . Package Power Dissipation Rating to 75 °C CDIP, PDIP, SOIC 900mW . . . . . . . . . . . . . . . . . . . . . . . . . Derates above 75 °C 12mW/ °C . . . . . . . . . . . . . . . . . . . . . NOTES: 1 Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation at or above this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. 2 Any input pin which can see a value outside the absolute maximum ratings should be protected by Schottky diode clamps (HP5082-2835) from input pin to the supplies. All inputs have protection diodes which will protect the device from short transients outside the supplies of less than 100mA for less than 100 µs. APPLICATION NOTES Refer to Section 8 for Applications Information |
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