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2N3174 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2N3174
Descripción Electrónicos  isc Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2N3174 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2N3174
DESCRIPTION
·
Excellent Safe Operating Area
·
Collector-Emitter Saturation Voltage-
: VCE(sat)= -0.75V(Max)@ IC = -1A
·
100% avalanche tested
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
All semelab hermetically sealed products,can be processed
in accordance with the requirements of BS,CECC,and
JAN,JANTX and JANTXV and JAN specifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
1.67
℃
/W
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-100
V
VCEO
Collector-Emitter Voltage
-100
V
VEBO
Emitter-Base Voltage
-10
V
IC
Collector Current-Continuous
-3
A
PC
Collector Power Dissipation@TC=25℃
75
W
TJ, Tstg
Operating and Storage Junction
Temperature Range
-65~+150
℃


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