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2SB848 Datasheet(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SB848 Datasheet(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 2 page ![]() INCHANGE Semiconductor isc website: www.iscsemi.com isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB848 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA ; IB= 0 -100 V VCE(sat) Collector-Emitter Saturation Voltage IC= -6A; IB= -0.6A -2.0 V VBE(on) Base-Emitter On Voltage IC= -6A ; VCE= -5V -1.5 V ICBO Collector Cutoff Current VCB= -100V ; IE= 0 -10 μ A IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μ A hFE DC Current Gain IC= -1A ; VCE= -5V 55 160 COB Output Capacitance IE= 0; VCB= -10V; ftest= 1.0MHz 270 pF fT Current-Gain—Bandwidth Product IC=-1A ; VCE= -5V 10 MHz |
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