STM8AF6213 datasheet(69/106 Pages) STMICROELECTRONICS

69 / 106 page

DocID025118 Rev 5

69/106

STM8AF6213/23/23A/26

Electrical characteristics

103

HSE oscillator critical gm formula

The crystal characteristics have to be checked with the following formula:

where gmcrit can be calculated with the crystal parameters as follows:

Rm: Notional resistance (see crystal specification)

Lm: Notional inductance (see crystal specification)

Cm: Notional capacitance (see crystal specification)

Co: Shunt capacitance (see crystal specification)



CL1 = CL2 = C: Grounded external capacitance

9.3.4

Internal clock sources and timing characteristics

Subject to general operating conditions for VDD and TA.

High speed internal RC oscillator (HSI)

gm gmcrit

gmcrit





HSE







2Co C



Table 41. HSI oscillator characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

ACCHS

HSI oscillator user

trimming accuracy

Trimmed by the application

for any VDD and TA

conditions

-1(1)

1. Depending on option byte setting (OPT3 and NOPT3)

-1(1)

-0.5(1)

HSI oscillator accuracy

(factory calibrated)

3.0 V

 VDD  5.5 V,

-40 °C

TA  150 °C

-5

3.0 V

 VDD  5.5 V,

-40 °C

TA  125 °C

-3(2)

2. These values are guaranteed for STM8AF62xxIxx order codes only.

tsu(HSI)

HSI oscillator wakeup

time

2(3)

3. Guaranteed by characterization, not tested in production

µs

IDD(HSI)

HSI oscillator power

consumption

170

250(4)

4. Data based on characterization results, not tested in production.

µA

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