3

3 - 60

For price, delivery, and to place orders, please contact Hittite Microwave Corporation:

20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373

Order On-line at www.hittite.com

Pad Descriptions

Pad Number

Function

Description

Interface Schematic

1RFIN

This pad is AC coupled

and matched to 50 Ohms

2-4

Vdd1, 2, 3

Power Supply Voltage for the amplifier. External bypass

capacitors of 100 pF and 0.01 μF are required.

5RFOUT

This pad is AC coupled

and matched to 50 Ohms.

6Vgg

Gate control for amplifier. Adjust to achieve Idd of 200 mA.

Please follow “MMIC Amplifier Biasing Procedure”

Application Note. External bypass capacitors of 100 pF

and 0.01 μF are required.

Die Bottom

GND

Die bottom must be connected to RF/DC ground.

Assembly Diagram

HMC499

v03.0908

GaAs PHEMT MMIC MEDIUM

POWER AMPLIFIER, 21 - 32 GHz