©

2001

PNP SILICON EPITAXIAL TRANSISTOR

2SA1836

PNP SILICON EPITAXIAL TRANSISTOR

DATA SHEET

Document No.

D15615EJ1V0DS00 (1st edition)

Date Published

July 2001 NS CP(K)

Printed in Japan

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

DESCRIPTION

The 2SA1836 is PNP silicon epitaxial transistor.

FEATURES

Collector to Base Voltage

−60

V

Collector to Emitter Voltage

−50

V

Emitter to Base Voltage

−5.0

V

Collector Current (DC)

−100

mA

Collector Current (pulse)

Note1

−200

mA

Note2

200

mW

Junction Temperature

150

°C

Storage Temperature Range

–55 to + 150

°C

Notes 1. PW

≤ 10 ms, Duty Cycle ≤ 50%

2. When mounted on ceramic substrate of 3.0 cm

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Collector Cut-off Current

−100

nA

Emitter Cut-off Current

−100

nA

DC Current Gain

Note

50

−

90

200

600

−

Base to Emitter Voltage

Note

−0.62

V

Collector Saturation Voltage

Note

−0.18

−0.3

V

Base Saturation Voltage

Note

−0.86

−1.0

V

Gain Bandwidth Product

50

180

MHz

Output Capacitance

4.5

6.0

pF

Note Pulsed: PW

≤ 350

µs, Duty Cycle ≤ 2%

Marking

M4

M5M6M7

90 to 180

135 to 270

200 to 400

300 to 600

PACKAGE DRAWING (Unit: mm)

0.3 ± 0.05

2

0.2

+0.1

–0

0.5

1: Emitter

2: Base

3: Collector

0.5

1.0

1.6 ± 0.1

3

1

0.6

0.75 ± 0.05

0 to 0.1

0.1

+0.1

–0.05