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2SA1822 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1822 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  INCHANGE Semiconductor isc website： www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon PNP Power Transistor 2SA1822 DESCRIPTION · High Collector-Emitter Breakdown Voltage · Excellent switching time · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · High voltage switching applications. · High speed DC-DC converter application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -1 A IB Base Current-Continuous -0.5 A PC Collector Power Dissipation @Ta=25℃ 2 W Collector Power Dissipation @TC=25℃ 25 TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ |
Número de pieza similar - 2SA1822 |
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Descripción similar - 2SA1822 |
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