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2SB547 Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza 2SB547
Descripción Electrónicos  Silicon PNP Power Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

2SB547 Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon PNP Power Transistor
2SB547
DESCRIPTION
·
Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V (Min)
·
Collector Power Dissipation-
: PC= 30W(Max)@ TC= 25℃
·
Complement to Type 2SD402
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in line-operated color TV vertical deflection
of complementary symmetry circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
-200
V
VCEO
Collector-Emitter Voltage
-150
V
VEBO
Emitter-Base Voltage
-5.0
V
IC
Collector Current-Continuous
-2
A
ICM
Collector Current-Peak
-3
A
IBM
Base Current-Peak
-1.5
A
PC
Total Power Dissipation
@ TC=25℃
30
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-a
Thermal Resistance,Junction to Ambient
78
℃
/W
Rth j-c
Thermal Resistance,Junction to Case
4.16
℃
/W


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