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IRF820A Datasheet(PDF) 1 Page - Inchange Semiconductor Company Limited

No. de pieza IRF820A
Descripción Electrónicos  N-Channel MOSFET Transistor
PDF  2 Pages
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Fabricante Electrónico  ISC [Inchange Semiconductor Company Limited]
Página de inicio  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

IRF820A Datasheet(HTML) 1 Page - Inchange Semiconductor Company Limited

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INCHANGE Semiconductor
isc Product Specification
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc N-Channel MOSFET Transistor
IRF820A
FEATURES
·
Low RDS(on) = 2.0Ω( TYP)
·
Lower Input Capacitance
·
Improved Gate Charge
·
Extended Safe Operating Area
·
Rugged Gate Oxide Technology
DESCRIPTION
·
Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
500
V
VGS
Gate-Source Voltage-Continuous
±
30
V
ID
Drain Current-Continuous
2.5
A
IDM
Drain Current-Single Pluse
128
A
PD
Total Dissipation @TC=25℃
50
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
2.57
℃
/W
Rth j-a
Thermal Resistance, Junction to Ambient
62.5
℃
/W


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