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CS86 Datasheet(PDF) 8 Page - fujitsu semiconductor

No. de pieza CS86
Descripción Electrónicos  The CS86 series of 0.18 mm standard cells is a line of CMOS ASICs based on higher integration implemented
PDF  16 Pages
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Fabricante Electrónico  FUJITSU [fujitsu semiconductor]
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CS86 Datasheet(HTML) 8 Page - fujitsu semiconductor

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CS86 Series
8
s RECOMMENDED OPERATING CONDITIONS
• Single power supply (VDD
= 1.8 V ± 0.15 V)
• Dual power supply (VDDE
= 3.3 V ± 0.3 V, VDDI = 1.8 V ± 0.15 V/VDDI = 1.5 V ± 0.1 V/VDDI = 1.1 V ± 0.1 V*)
* : VDDI
= 1.1 V±0.1 V is being prepared.
• Dual power supply (VDDE
= 2.5 V ± 0.2 V, VDDI = 1.8 V ± 0.15 V/VDDI = 1.5 V ± 0.1 V/VDDI = 1.1 V ± 0.1 V*)
* : VDDI
= 1.1 V±0.1 V is being prepared.
(VSS
= 0 V)
Parameter
Symbol
Value
Unit
Min
Typ
Max
Supply voltage
VDD
1.65
1.8
1.95
V
“H” level input voltage
VIH
VDD
× 0.65
VDD
+ 0.3
V
“L” level input voltage
VIL
−0.3
VDD
× 0.35
V
Junction temperature
Tj
−40
+125
°C
(VSS
= 0 V)
Parameter
Symbol
Value
Unit
Min
Typ
Max
Supply voltage
VDDE
3.0
3.3
3.6
V
VDDI
1.65
1.8
1.95
1.4
1.5
1.6
1.0
1.1
1.2
“H” level input voltage
1.8 V CMOS
VIH
VDDI
× 0.65
VDDI
+ 0.3
V
3.3 V CMOS
2.0
VDDE
+ 0.3
“L” level input voltage
1.8 V CMOS
VIL
−0.3
VDDI
× 0.35
V
3.3 V CMOS
−0.3
0.8
Junction temperature
Tj
−40
+125
°C
(VSS
= 0 V)
Parameter
Symbol
Value
Unit
Min
Typ
Max
Supply voltage
VDDE
2.3
2.5
2.7
V
VDDI
1.65
1.8
1.95
1.4
1.5
1.6
1.0
1.1
1.2
“H” level input voltage
1.8 V CMOS
VIH
VDDI
× 0.65
VDDI
+ 0.3
V
2.5 V CMOS
1.7
VDDE
+ 0.3
“L” level input voltage
1.8 V CMOS
VIL
−0.3
VDDI
× 0.35
V
2.5 V CMOS
−0.3
0.7
Junction temperature
Tj
−40
+125
°C



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