Features

• Built using the advantages and compatibility

• Latch-Up Protected

• High Peak Output Current: Dual 15A Peak

• Wide Operating Range: 8V to 30V

• Rise And Fall Times of <3ns

• Minimum Pulse Width Of 6ns

• Ability to Disable Output under Faults

• High Capacitive Load

Drive Capability: 4nF in <5ns

• Matched Rise And Fall Times

• 32ns Input To Output Delay Time

• Low Output Impedance

• Low Supply Current

Applications

• Driving RF MOSFETs

• Class D or E Switching Amplifier Drivers

• Multi MHz Switch Mode Power Supplies (SMPS)

• Pulse Generators

• Acoustic Transducer Drivers

• Pulsed Laser Diode Drivers

• DC to DC Converters

• Pulse Transformer Driver

First Release

Copyright © IXYS CORPORATION 2001

Patent Pending

IXDD415SI

Dual 15 Ampere Low-Side Ultrafast MOSFET Driver

Figure 1 - Functional Diagram

INB (8)

INA (7)

ENA (6)

ENB (9)

OUTA (22, 23, 24)

OUTB (19, 20, 21)

200k

200k

GND (25, 26)

Vcc (11, 12)

Vcc (13, 14)

Vcc (3, 4)

Vcc (1, 2)

GND (15, 16)

GND (17, 18)

GND (27, 28)

General Description

The IXDD415 is a dual CMOS high speed high current gate

driver specifically designed to drive MOSFETs in Class D and E

HF RF applications, as well as other applications requiring

ultrafast rise and fall times or short minimum pulse widths.

Each output of the IXDD415 can source and sink 15A of peak

current while producing voltage rise and fall times of less than

3ns. The outputs of the IXDD415 may be paralleled, producing a

single output of up to 30A with comparable rise and fall times.

The input of the driver is compatible with TTL or CMOS and is

fully immune to latch up over the entire operating range.

Designed with small internal delays, cross conduction/current

shoot-through is virtually eliminated in the IXDD415. Its features

and wide safety margin in operating voltage and power make

the IXDD415 unmatched in performance and value.

The IXDD415 has two enable inputs, ENA and ENB. These

enable inputs can be used to independently disable either of the

outputs, OUTA or OUTB, for added flexibility. Additionally, the

IXDD415 incorporates a unique ability to disable the output

under fault conditions. When a logical low is forced into the

Enable inputs, both final output stage MOSFETs (NMOS and

PMOS) are turned off. As a result, the output of the IXDD415

enters a tristate mode and achieves a Soft Turn-Off of the

MOSFET when a short circuit is detected. This helps prevent

damage that could occur to the MOSFET if it were to be

switched off abruptly due to a dv/dt over-voltage transient.

The IXDD415 is available in a 28 pin SO package (IXDD415SI),

stray lead inductances for optimum switching performance.

(1)

DEI U.S. Patent #4,891,686